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Citation
Tags
HERO ID
1015707
Reference Type
Journal Article
Title
Photovoltaic device on a single ZnO nanowire p-n homojunction
Author(s)
Cho, HD; Zakirov, AS; Yuldashev, SU; Ahn, CW; Yeo, YK; Kang, TW
Year
2012
Is Peer Reviewed?
1
Journal
Nanotechnology
ISSN:
0957-4484
EISSN:
1361-6528
Volume
23
Issue
11
Language
English
PMID
22383446
DOI
10.1088/0957-4484/23/11/115401
Web of Science Id
WOS:000301661700006
Abstract
A photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices.
Tags
IRIS
•
Arsenic Hazard ID
1. Initial Lit Search
PubMed
4. Considered through Oct 2015
6. Cluster Filter through Oct 2015
•
Arsenic (Inorganic)
1. Literature
PubMed
4. Adverse Outcome Pathways/Networks Screening
Excluded/Not relevant
Title/Abstract screening
•
Arsenic MOA
1. MOA Literature Screening
MOA Cluster
3. Excluded
Other not relevant
Dragon Screened
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