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Citation
Tags
HERO ID
1380444
Reference Type
Journal Article
Subtype
Letter
Title
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
Author(s)
Aagesen, M; Johnson, E; Sørensen, CB; Mariager, SO; Feidenhans'l, R; Spiecker, E; Nygård, J; Lindelof, PE
Year
2007
Is Peer Reviewed?
1
Journal
Nature Nanotechnology
ISSN:
1748-3387
EISSN:
1748-3395
Volume
2
Issue
12
Page Numbers
761-764
Language
English
PMID
18654427
DOI
10.1038/nnano.2007.378
Abstract
Free-standing nanostructures such as suspended carbon nanotubes, graphene layers, III-V nanorod photonic crystals and three-dimensional structures have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications.
Tags
IRIS
•
Arsenic Hazard ID
1. Initial Lit Search
ToxNet
4. Considered through Oct 2015
6. Cluster Filter through Oct 2015
•
Arsenic (Inorganic)
1. Literature
Toxline, TSCATS, & DART
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