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1381675 
Journal Article 
Structural phase control in self-catalyzed growth of GaAs nanowires on silicon (111) 
Krogstrup, P; Popovitz-Biro, R; Johnson, E; Madsen, MH; Nygård, J; Shtrikman, H 
2010 
1 
Nano Letters
ISSN: 1530-6984
EISSN: 1530-6992 
10 
11 
4475-4482 
English 
20932012 
Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.