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HERO ID
4839188
Reference Type
Journal Article
Title
Passivating Contacts for Crystalline Silicon Solar Cells: From Concepts and Materials to Prospects
Author(s)
Melskens, J; van De Loo, BasWH; Macco, B; Black, LE; Smit, S; Kessels, WMM(
Year
2018
Journal
IEEE Journal of Photovoltaics
ISSN:
2156-3381
Volume
8
Issue
2
Page Numbers
373-388
DOI
10.1109/JPHOTOV.2018.2797106
Web of Science Id
WOS:000425525100002
Abstract
To further increase the conversion efficiency of crystalline silicon (c-Si) solar cells, it is vital to reduce the recombination losses associated with the contacts. Therefore, a contact structure that simultaneously passivates the c-Si surface while selectively extracting only one type of charge carrier (i.e., either electrons or holes) is desired. Realizing such passivating contacts in c-Si solar cells has become an important research objective, and an overview and classification of work to date on this topic is presented here. Using this overview, we discuss the design guidelines for passivating contacts and outline their prospects.
Keywords
Charge carrier lifetime; contacts; crystalline silicon (c-Si); passivation; photovoltaic (PV) cells
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