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6231453 
Journal Article 
The 8-inch free-standing CVD diamond wafer fabricated by DC-PACVD 
Baik, YJ; Chae, KW; Lee, WS; Park, JK 
2010 
Yes 
Diamond and Related Materials
ISSN: 0925-9635 
19 
10 
1168-1171 
WOS:000282203300007 
We report the fabrication of the 8-inch free-standing CVD diamond wafers by DC-PACVD process with the diode-type electrode configuration. Methane–hydrogen gas mixture was used as the precursor gas. The methane volume % in hydrogen, the gas flow rate and the chamber pressure were 5∼12%, 400sccm and 100∼130Torr, respectively. The discharge voltage and the discharge current were 840∼910V and 90∼110A, respectively. The substrate temperature was 1200∼1300°C. The thermal conductivity, crystallinity and microstructure were characterized by the converging thermal wave technique, Raman spectroscopy, optical microscopy and SEM, respectively. The maximum growth rate was 9μm/h for thermal grade 8-inch wafer. The deviation of thickness and the thermal conductivity over the 8-inch wafer was around 10% of the respective averaged values. The distribution of FWHM of Raman diamond peak over the wafer surface also showed excellent uniformity. The extremely simple scale-up of the present deposition technology was demonstrated. 
Large-area; Diamond thick film