Clostridium beijerinckii mutant with high inhibitor tolerance obtained by low-energy ion implantation
Guo, T; Tang, Yan; Zhang, Qiuyan; Du, Tfei; Liang, DaF; Jiang, Min; Ouyang, Pkai
HERO ID
1461911
Reference Type
Journal Article
Year
2012
Language
English
PMID
| HERO ID | 1461911 |
|---|---|
| In Press | No |
| Year | 2012 |
| Title | Clostridium beijerinckii mutant with high inhibitor tolerance obtained by low-energy ion implantation |
| Authors | Guo, T; Tang, Yan; Zhang, Qiuyan; Du, Tfei; Liang, DaF; Jiang, Min; Ouyang, Pkai |
| Journal | Journal of Industrial Microbiology and Biotechnology |
| Volume | 39 |
| Issue | 3 |
| Page Numbers | 401-407 |
| Abstract | Clostridium beijerinckii mutant strain IB4, which has a high level of inhibitor tolerance, was screened by low-energy ion implantation and used for butanol fermentation from a non-detoxified hemicellulosic hydrolysate of corn fiber treated with dilute sulfuric acid (SAHHC). Evaluation of toxicity showed C. beijerinckii IB4 had a higher level of tolerance than parent strain C. beijerinckii NCIMB 8052 for five out of six phenolic compounds tested (the exception was vanillin). Using glucose as carbon source, C. beijerinckii IB4 produced 9.1 g l(-1) of butanol with an acetone/butanol/ethanol (ABE) yield of 0.41 g g(-1). When non-detoxified SAHHC was used as carbon source, C. beijerinckii NCIMB 8052 grew well but ABE production was inhibited. By contrast, C. beijerinckii IB4 produced 9.5 g l(-1) of ABE with a yield of 0.34 g g(-1), including 2.2 g l(-1) acetone, 6.8 g l(-1) butanol, and 0.5 g l(-1) ethanol. The remarkable fermentation and inhibitor tolerance of C. beijerinckii IB4 appears promising for ABE production from lignocellulosic materials. |
| Doi | 10.1007/s10295-011-1017-5 |
| Pmid | 21789489 |
| Wosid | WOS:000300587700003 |
| Is Certified Translation | No |
| Dupe Override | No |
| Comments | Source: Web of Science WOS:000300587700003 |
| Is Public | Yes |
| Language Text | English |
| Keyword | Butanol; Clostridium beijerinckii; Inhibitor tolerance; Low-energy ion implantation |