Dynamic Random Access Memory Devices Based on Functionalized Copolymers with Pendant Hydrazine Naphthalimide Group
Li, Hua; Li, N; Sun, Ru; Gu, H; Ge, J; Lu, J; Xu, Q; Xia, X; Wang, L
| HERO ID | 1595191 |
|---|---|
| In Press | No |
| Year | 2011 |
| Title | Dynamic Random Access Memory Devices Based on Functionalized Copolymers with Pendant Hydrazine Naphthalimide Group |
| Authors | Li, Hua; Li, N; Sun, Ru; Gu, H; Ge, J; Lu, J; Xu, Q; Xia, X; Wang, L |
| Journal | Journal of Physical Chemistry C |
| Volume | 115 |
| Issue | 16 |
| Page Numbers | 8288-8294 |
| Abstract | In this paper, one methacrylate monomer contaming naphthalimide as electron acceptor and aromatic hydrazone as electron donor was designed and synthesized. Its copolymer with styrene has been incorporated into sandwiched memory devices which show dynamic random access memory, characteristics with highest ON/OFF current ratio up to 10(6) and a long retention time. Moreover, it was observed that switch threshold voltage of the device varied almost linearly with functional moiety content in the copolymer. The photoluminescence spectra and X-ray diffraction of the copolymer's film were investigated and the results showed that the functional moieties in the pendant chains occurred as pi-pi stacking and the distance between each other became closer as the functional moieties content in the copolymer increased The mechanisms associated with dram characteristics were elucidated from molecular simulation results that the slight electron density transition from the HOMO to LUMO surfaces would easily revert to original state once the external electric field was removed. |
| Doi | 10.1021/jp1111668 |
| Wosid | WOS:000289697400056 |
| Is Certified Translation | No |
| Dupe Override | No |
| Comments | Source: Web of Science WOS:000289697400056 |
| Is Public | Yes |