Metal-insulator transition in V(1-x)W(x)O2: structural and electronic origin

Si, C; Xu, W; Wang, H; Zhou, J; Ablat, A; Zhang, L; Cheng, J; Pan, Z; Fan, L; Zou, C; Wu, Z

HERO ID

1749309

Reference Type

Journal Article

Year

2012

Language

English

PMID

23034581

HERO ID 1749309
In Press No
Year 2012
Title Metal-insulator transition in V(1-x)W(x)O2: structural and electronic origin
Authors Si, C; Xu, W; Wang, H; Zhou, J; Ablat, A; Zhang, L; Cheng, J; Pan, Z; Fan, L; Zou, C; Wu, Z
Journal Physical Chemistry Chemical Physics
Volume 14
Issue 43
Page Numbers 15021-15028
Abstract The driving mechanism of the metal-insulator transition (MIT) in VO(2) has always attracted attention, in particular with regards to understanding if and how the doping mechanism may tune the MIT transition temperature. However, due to the lack of detailed local structural information, in this oxide the underlying MIT mechanism is still matter of debate. In this contribution on the V(1-x)W(x)O(2) system, we attempt to clarify the origin of the MIT induced by tungsten doping. Combining W L(3)-edge and V K-edge extended X-ray absorption fine-structure (EXAFS) spectroscopy, the local structures around both V and W have been obtained. The data point out the occurrence of internal stress along the V-V chains induced by doping. It reaches a critical value that remains constant during the transition. The main effect of the internal stress on the vanadium local structure has also been identified. Actually, upon increasing the dopant concentration, the tilt of the V-V pairs towards the apex oxygen atoms in the VO(6) octahedron decreases while the V-V bond lengths remain unchanged. The electronic structure has also been investigated by O K-edge X-ray absorption near-edge structure (XANES) spectroscopy. Actually, at high doping concentrations the interaction of O(2p) and the V d(∥) state increases, while the hybridization of O(2p) and V π* decreases. The O(2p)-V(3d) hybridization is therefore an essential parameter correlated with the decreasing transition temperature in the V(1-x)W(x)O(2) system.
Doi 10.1039/c2cp42313h
Pmid 23034581
Wosid WOS:000310005700034
Is Certified Translation No
Dupe Override No
Is Public Yes
Language Text English