High-performance organic complementary inverters using monolayer graphene electrodes
Jeong, YJ; Jang, J; Nam, S; Kim, K; Kim, LH; Park, S; An, TK; Park, CE
| HERO ID | 3226073 |
|---|---|
| In Press | No |
| Year | 2014 |
| Title | High-performance organic complementary inverters using monolayer graphene electrodes |
| Authors | Jeong, YJ; Jang, J; Nam, S; Kim, K; Kim, LH; Park, S; An, TK; Park, CE |
| Volume | 6 |
| Issue | 9 |
| Page Numbers | 6816-6824 |
| Abstract | Chemical vapor deposition-grown graphene has been an attractive electrode material for organic electronic devices, such as organic field-effect transistors (OFETs), because it is highly conductive and provides good oxidation and thermal stability properties. However, it still remains a challenge to demonstrate organic complementary circuits using graphene electrodes because of the relatively poor performance of n-type OFETs. Here, we report the development of high-performance organic complementary inverters using graphene as source/drain electrodes and N, N'-ditridecyl-3,4,9,10-perylenetetracarboxylic diimide (PTCDI-C13) and pentacene as n- and p-type organic semiconductors, respectively. Graphene electrodes were n-doped via the formation of NH2-terminated self-assembled monolayers that lowered the work function and the electron injection barrier between the graphene and PTCDI-C13. Thermal annealing improved the molecular packing among PTCDI-C13 groups on the graphene surface, thereby increasing the crystallinity and grain size. The thermally annealed PTCDI-C13 OFETs prepared using n-doped graphene electrodes exhibited a good field-effect mobility of up to 0.43 cm2/(V s), which was comparable to the values obtained from other p-type pentacene OFETs. By integrating p- and n-type OFETs, we successfully fabricated organic complementary inverters that exhibited highly symmetric operation with an excellent voltage gain of up to 124 and good noise margin. |
| Doi | 10.1021/am500618g |
| Pmid | 24731001 |
| Wosid | WOS:000336075300098 |
| Is Certified Translation | No |
| Dupe Override | No |
| Comments | Journal: ACS applied materials & interfaces ISSN: 1944-8252 |
| Is Public | Yes |
| Language Text | English |