Simulation of transient photoconduction in organic p-n junction bilayer photodiodes

Tan, L; Curtis, MD; Francis, AH

HERO ID

3575851

Reference Type

Journal Article

Year

2004

HERO ID 3575851
In Press No
Year 2004
Title Simulation of transient photoconduction in organic p-n junction bilayer photodiodes
Authors Tan, L; Curtis, MD; Francis, AH
Journal Chemistry of Materials
Volume 16
Issue 11
Page Numbers 2134-2141
Abstract The transient photoconducting behavior of organic p/n bilayer photocells has been investigated in cells constructed with the copolymer, poly(3-butylthiophene-co-ethylenedioxythiophene), as p-type material and a perylene diimide (PV) as the n-type material. The decay rate constant of the transient photocurrent observed after pulsed illumination is independent of the applied electric field, light intensity, and temperature. However, the peak photoresponse was strongly affected by these variables. Simulations of the photoresponse revealed that the peak current depends primarily on the carrier mobility (at a given light intensity), whereas the characteristic decay rate is hardly influenced by the mobility, but depends on the carrier lifetime which is chiefly due to trapping by deep levels.
Doi 10.1021/cm035102d
Wosid WOS:000221683300013
Is Certified Translation No
Dupe Override No
Is Public Yes