Improving performance characteristics of semiconductor sensors based on adsorption SnO2 using photons stimulation

Al-Salim, SZ; Cheremisina, OV; Cheremisina, EA; Migalovskaya, ED; Kleshchenko, RV

HERO ID

4936129

Reference Type

Journal Article

Year

2012

HERO ID 4936129
In Press No
Year 2012
Title Improving performance characteristics of semiconductor sensors based on adsorption SnO2 using photons stimulation
Authors Al-Salim, SZ; Cheremisina, OV; Cheremisina, EA; Migalovskaya, ED; Kleshchenko, RV
Journal Russian Journal of Physical Chemistry B, Focus on Physics
Volume 6
Issue 5
Page Numbers 637-642
Abstract The paper considers the possibility of increasing the sensitivity of semiconductor adsorption sensors using photon laser stimulation of low power. The results of experiments on the detection of vapors of malonic ester to semiconductor sensors manufactured on the basis of tin dioxide with various doping impurities with the use of laser irradiation and without it. The mechanism of photon stimulation was proposed and its effect was examined on the kinetics of adsorption and an increase the indicator effect.
Doi 10.1134/S1990793112050193
Wosid WOS:000311300300007
Is Certified Translation No
Dupe Override No
Is Public Yes
Keyword adsorption; stimulation; semiconductor adsorption sensor; gas-sensitive layer; active center