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1575066 
Journal Article 
MOS capacitance properties of silicon-based PZT thin films - art. no. 69841O 
Zhang, X; Shi, M; Qin, S; Guo, M; Deng, H; Yang, P 
2008 
Unk 
Proceedings of SPIE
ISSN: 0277-786X
EISSN: 1996-756X 
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE) 
6984 
O9841-O9841 
WOS:000254834800059 
Ferroelectric Pb(Zr0.53Ti0.47)O-3 (PZT) thin films were
grown on silicon substrates by modified Sol-Gel method using C(4)H(6)O(4)Pbe center dot 3H(2)0,
ZrO(NO3)2 center dot 2H(2)0 and Ti(OC4H9) as raw materials. PbTiO3 (PT) thin film was introduced
as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM.
Electrical properties such as C-V and leakage current characteristics of the films was
investigated. The results show that PT buffer layer was helpful to improve the dielectric and
ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and
reduced the leakage current density of PZT/PT/Si structure about 10(-2) compared with that of
PZT/Si structure. 
PZT thin film; sol-gel; PT buffer layer