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1589460 
Journal Article 
Effects of sintering temperature on the microstructure and dielectric properties of titanium dioxide ceramics 
Chao, S; Petrovsky, V; Dogan, F 
2010 
Yes 
Journal of Materials Science
ISSN: 0022-2461
EISSN: 1573-4803 
45 
24 
6685-6693 
Nanostructured (similar to 200 nm grain size) titanium
dioxide (TiO(2)) ceramics were densified at temperature as low as 800 degrees C by pressureless
sintering in a pure oxygen atmosphere. Phase transition and microstructural development of
sintered samples were studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM).
Dielectric properties including d.c. conductivity, dielectric constant, loss tangent, and
dielectric breakdown strength (BDS) were determined for samples sintered at various temperatures.
The influence of sintering temperature on the microstructural development, defect chemistry, and
dielectric properties of TiO(2) is discussed. Nanostructured TiO(2) ceramics with high sintering
density (>98%) lead to improved dielectric properties; high BDS (similar to 1800 kV/cm), low
electrical conductivity (similar to 5 x 10(-15) S/cm), high dielectric constant (similar to 130),
and low loss tangent (similar to 0.09% at 1 kHz), which is promising for application in high
energy density capacitors.