US EPA

1589655 

Journal Article 

Dry etching properties of TiO2 thin films in O-2/CF4/Ar plasma 

Choi, K; Woo, JC; Joo, Y; Chun, Y; Kim, CIl 

2013 

1 

Vacuum
ISSN: 0042-207X 

92 

85-89 

10.1016/j.vacuum.2012.11.009 

WOS:000315133200015 

In this work, the etching properties of titanium dioxide
(TiO2) thin film in additions of O-2 at CF4/Ar plasma were investigated. The maximum etch rate of
179.4 nm/min and selectivity of TiO2 of 0.6 were obtained at an O-2/CF4/Ar (=3:16:4 sccm) gas
mixing ratio. In addition, the etch rate and selectivity were measured as a function of the
etching parameters, such as the RF power, DC-bias voltage, and process pressure. The efficient
destruction of the oxide bonds by ion bombardment, which was produced from the chemical reaction
of the etched TiO2 thin film, was investigated by X-ray photoelectron spectroscopy. To determine
the re-deposition of sputter products and reorganization of such residues on the surface, the
surface roughness of TiO2 thin film were examined using atomic force microscopy. (C) 2012
Elsevier Ltd. All rights reserved. 

TiO2; XPS; CF4/Ar; Etching; AFM