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1741759 
Journal Article 
Preparation of ferroelectric Pb(Zr-0.52 Ti-0.48)O-3 thin films by sol-gel processing 
Seo, KW; Cho, SH; Lee, SH 
2001 
1 
Korean Journal of Chemical Engineering
ISSN: 0256-1115
EISSN: 1975-7220 
18 
1 
75-80 
WOS:000167067600011 
Ferroelectric Pb(Zrb(0.52)Ti(0.48))O-3 thin films were prepared by sol-gel processing on the Pt/Ti/SiO2/Si(100) substrates. Effects of the concentration (0.2-0.8 M) of the starting solution (Pb/Zr/Ti=1.1/0.52/0.48) and the sintering temperature (500-700 degreesC) on crystallinity, microstructure and electrical properties of PZT thin films were investigated. For the thin film prepared at 0.4 M starting solution, the highest crystallinity appeared at a sintering temperature of 650 degreesC. The average grain size of the PZT thin films was about 0.17 mum. The film thickness was about 0.2 mum. The relative dielectric constant and the dissipation factor of the film measured at 1 kHz were about 750 and 4.3%, respectively. The remnant polarization (Pr) and coercive field (Ec) of the film measured at the applied voltage of 5 V were about 49 muC/cm(2) and 134 kV/cm, respectively. 
ferroelectric; thin films; sok-gel processing; PZT perovskite phase; relative dielectric constant; dissipation factor