Health & Environmental Research Online (HERO)


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2572274 
Journal Article 
A simple route to synthesize impurity-free high-oriented SiO(x) nanowires 
Chiu, SC; Li, YYao 
2008 
138-141 
WOS:000272170200038 
Impurity-free silicon oxide nanowires were synthesized on a 3 cm x 3 cm alumina plate uniformly by thermal evaporation of a mixture of powder of graphite powders and SiO(x)@Si core-shell particles under argon atmosphere with a flow rate of 50 sccm at 1100 degrees C for 3 hours. The as-synthesized products characterized by field-emission scanning electron microscopy, field-emission transmission electron microscopy and energy-dispersive spectroscopy show that SiO(x) nanowires were of diameters ranging from 50-100 nm and the height is up to several millimeters. The growth mechanism of SiO(x) nanowires was studied and suggested to be the vapor-solid (VS) mechanism. 
silicon oxide; nanowires; thermal evaporation; vapor-solid mechanism