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2661176 
Journal Article 
Single-Crystal SiC Resonators by Photoelectrochemical Etching 
Islam, MM; Huang, CF; Zhao, F 
2012 
1 
Materials Science Forum
ISSN: 0255-5476
EISSN: 1662-9752 
Materials Science Forum 
717-720 
529-532 
WOS:000309431000126 
In this paper, we report single-crystal 4H-SiC resonant structures fabricated by dopant-selective photoelectrochemical etching. The frequency response of the resonant beams was characterized by a dynamic scanning method using AFM with the beams excited by a piezoelectric actuator under atmosphere pressure and room temperature. The beam with a length of 35 pm shows mechanical resonance at 945 kHz. The Young's modulus of single-crystal SiC was derived from the measured resonant frequency. Single-crystal 4H-SiC resonators developed in this study fully exploit the excellent electrical, mechanical, and chemical properties of SiC, while dopant-selective photoelectrochemical etching technique significantly simplifies the fabrication process. 
Single crystal; SiC; resonator; photoelectrochemical etching