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2663822 
Journal Article 
Development of integrated Delta E-E silicon detector telescope using silicon planar technology 
Topkar, A; Singh, A; Santra, S; Mukhopadhyay, PK; Chatterjee, A; Choudhury, RK; Pithawa, CK 
2011 
1 
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
ISSN: 0168-9002 
654 
1 
330-335 
WOS:000295765100046 
An integrated Delta E-E silicon detector telescope using silicon planar technology has been developed. The technology developed is based on standard integrated circuit technology and involves double sided wafer processing. The Delta E and E detectors have been realized in a PIN configuration with a common buried N(+) layer. Detectors with Delta E thicknesses of 10, 15 and 25 mu m, and E detector with thickness of 300 mu m have been fabricated and tested with alpha particles using (238)Pu-(239)Pu dual alpha source. The performance of the detector with Delta E detector of thickness 10 mu m and E detector of thickness 300 pm has been studied for identification of charged particles using 12 MeV (7)Li(+) ion beam on carbon target. The results of these tests demonstrate that the integrated detector telescope clearly separates the charged particles, such as alpha particles, protons and (7)Li. Due to good energy resolution of the E detector, discrete alpha groups corresponding to well known states of (15)N populated during the reaction could be clearly identified. (C) 2011 Elsevier B.V. All rights reserved. 
Integrated E-Delta E telescope; Particle identification; Silicon detector