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2669319 
Journal Article 
Elimination of silicon gas phase nucleation using tetrafluorosilane (SiF4) precursor for high quality thick silicon carbide (SiC) homoepitaxy 
Rana, T; Chandrashekhar, MVS; Sudarshan, TS 
2012 
1 
Physica Status Solidi. A: Applications and Materials Science (Print)
ISSN: 1862-6300 
209 
12 
2455-2462 
WOS:000313733000014 
Tetrafluorosilane (SiF4) gas precursor is utilized to eliminate Si gas phase nucleation and Si parasitic deposition during silicon carbide (SiC) epitaxial growth, otherwise unachievable in similar growth conditions using conventional silane (SiH4) and dichlorosilane (SiCl2H2/DCS) precursors. Higher Si-F bond strength (565 kJ mol(-1)) in SiF4 prevents early gas decomposition and Si cluster formation, essential for high temperature SiC chemical vapor deposition (CVD), and yet enables growth of high quality epitaxy in an improved particulate suppressed growth condition. High quality, thick 4H-SiC epilayers >100mm have been demonstrated using SiF4 with excellent surface morphology, polytype uniformity, crystallinity and low defect density. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim 
chemical vapour deposition; parasitic deposition; silicon carbide epitaxy; silicon cluster; tetrafluorosilane