US EPA

2991854 

Journal Article 

Vertical Heterostructure of Two-Dimensional MoS2 and WSe2 with Vertically Aligned Layers 

Yu, JHo; Lee, H; Hong, S; Kong, D; Lee, HW; Wang, H; Xiong, F; Wang, S; Cui, Yi 

2015 

1 

Nano Letters
ISSN: 1530-6984
EISSN: 1530-6992 

15 

2 

1031-1035 

English 

25590995 

10.1021/nl503897h 

WOS:000349578000035 

Two-dimensional (2D) layered materials consist of covalently bonded 2D atomic layers stacked by van der Waals interactions. Such anisotropic bonding nature gives rise to the orientation-dependent functionalities of the 2D layered materials. Different from most studies of 2D materials with their atomic layers parallel to substrate, we have recently developed layer vertically aligned 2D material nanofilms. Built on these developments, here, we demonstrate the synthesis of vertical heterostructure of n-type MoS2 and p-type WSe2 with vertically aligned atomic layers. Thin film of MoS2/WSe2 vertical structure was successfully synthesized without significant alloy formation. The heterostructure synthesis is scalable to a large area over 1 cm(2). We demonstrated the pn junction diode behavior of the heterostructure device. This novel device geometry opens up exciting opportunities for a variety of electronic and optoelectronic devices, complementary to the recent interesting vertical heterostructures with horizontal atomic layers. 

Two-dimensional layered material; transition metal dichalcogenide; heterostructure; molybdenum disulfide; tungsten diselenide; vertically aligned layer