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3073465 
Journal Article 
Synthesis and characterization of gallium nitride nanoparticles by using solvothermal-soft-chemical methodology 
Cruz-Lopez, A; Manzo-Robledo, A; Vazquez-Cuchillo, O; Zanella, R; Gomez, R; Santoyo-Salazar, J; Campos-Badillo, A 
2015 
1 
Materials Science in Semiconductor Processing
ISSN: 1369-8001 
30 
435-441 
WOS:000347266900060 
GaN nanoparticles have been synthesized by solvothermal method. Gallium acetylacetonate and ammonium acetate were mixed in stoichiometry conditions. The reaction was induced in different solvents such as ethanol, ethylene glycol, propanol and benzene. The as-prepared materials were heat-treated from 240 to 950 degrees C. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) put in evidence that the resulting intrinsic-structure is highly linked with the solvent in turn and with temperature. It was found that wurzite phase is reached at 950 degrees C with benzene as a solvent; with surface area of 50 m(2) g(-1), measured by nitrogen physisorption. In addition, well-defined GaN-nanoparticles were determined using SEM-EDS and HRTEM for a diffraction-selected area (SAED). Moreover, optical properties obtained by using photoluminescence (PL) spectroscopy indicated a well crystal-definition from bands at 2.85 and 3.0 eV related with structural defects. GaN deposited onto an ITO substrate induced a more cathodic current corresponding to hydrogen evolution compared with ITO free of GaN in neutral conditions. (C) 2014 Elsevier Ltd. All rights reserved. 
Nano-particles; Material science; Structural characterization; Electro-catalysis; Non-oxide semiconductors