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HERO ID
3115524
Reference Type
Journal Article
Title
Silicon anisotropic etching in Triton-mixed and isopropyl alcohol-mixed tetramethyl ammonium hydroxide solution
Author(s)
Yao, M; Tang, Bin; Sato, K; Su, Wei
Year
2015
Is Peer Reviewed?
1
Journal
Micro and Nano Letters
ISSN:
1750-0443
Volume
10
Issue
9
Page Numbers
469-471
DOI
10.1049/mnl.2015.0104
Web of Science Id
WOS:000361382300011
Abstract
The anisotropic silicon (Si) etching characteristics of Si (100) in 25 wt.% tetramethyl ammonium hydroxide (TMAH) solutions containing Triton X-100 and isopropyl alcohol (IPA) were studied. The etch rate, convex corners and roughness of the etched surface were investigated. In this reported work two central goals, a mirror-like surface finish and a high reduction of undercutting, have been achieved. The best etched result was obtained in 25 wt.% TMAH + 0.25%v/v Triton + 16%v/v IPA, which has minimum convex corner undercutting and a smooth etched surface (R-a = 1 nm). This study is useful for engineering applications where the fabrication of microstructures for high-quality devices should simultaneously contain smooth surfaces on a large area and less convex corner undercutting.
Keywords
silicon; etching; elemental semiconductors; surface roughness; surface finishing; silicon anisotropic etching; triton-mixed tetramethyl ammonium hydroxide solution; isopropyl alcohol-mixed tetramethyl ammonium hydroxide solution; Triton X-100; etch rate; convex corners; etched surface roughness; mirror-like surface finish; microstructure fabrication; Si
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