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HERO ID
4241964
Reference Type
Journal Article
Title
Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium
Author(s)
Kim, H; Ren, D; Farrell, AC; Huffaker, DL
Year
2018
Is Peer Reviewed?
1
Journal
Nanotechnology
ISSN:
0957-4484
EISSN:
1361-6528
Volume
29
Issue
8
Page Numbers
085601
Language
English
PMID
29300185
DOI
10.1088/1361-6528/aaa52e
Abstract
We demonstrate catalyst-free growth of GaAs nanowires by selective-area metal-organic chemical vapor deposition (MOCVD) on GaAs and silicon substrates using a triethylgallium (TEGa) precursor. Two-temperature growth of GaAs nanowires-nucleation at low temperature followed by nanowire elongation at high temperature-almost completely suppresses the radial overgrowth of nanowires on GaAs substrates while exhibiting a vertical growth yield of almost 100%. A 100% growth yield is also achieved on silicon substrates by terminating Si(111) surfaces by arsenic prior to the nanowire growth and optimizing the growth temperature. Compared with trimethylgallium (TMGa) which has been exclusively employed in the vapor-solid phase growth of GaAs nanowires by MOCVD, the proposed growth technique using TEGa is advantageous because of lower growth temperature and fully suppressed radial overgrowth. It is also known that GaAs grown by TEGa induce less impurity incorporation compared with TMGa, and therefore the proposed method could be a building block for GaAs nanowire-based high-performance optoelectronic and nanoelectronic devices on both III-V and silicon platforms.
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