Jump to main content
US EPA
United States Environmental Protection Agency
Search
Search
Main menu
Environmental Topics
Laws & Regulations
About EPA
Health & Environmental Research Online (HERO)
Contact Us
Print
Feedback
Export to File
Search:
This record has one attached file:
Add More Files
Attach File(s):
Display Name for File*:
Save
Citation
Tags
HERO ID
4416569
Reference Type
Book/Book Chapter
Title
Etching silicon nitride and silicon oxide using ethylene glycol/hydrofluoric acid mixtures
Author(s)
Wood, A; Detterbeck, S
Year
2000
Book Title
ELECTROCHEMICAL SOCIETY SERIES
Volume
99
Issue
36
Page Numbers
258-263
Web of Science Id
WOS:000088232900033
Abstract
Concentrated (49%) aqueous HF and ethylene glycol solutions were investigated for a wet strip process requiring a LPCVD Si3N4 to thermal SiO2 etch rate selectivity of between 1 and 2. Si3N4 etch rates of higher than 20 nm per minute were also desired to obtain high throughputs on the single-wafer spray tool. Water, temperature, and HF concentration were found to play a significant role in defining both the etch rates and etch-rate selectivity of LPCVD Si3N4 and thermal SiO2 films. The desired Si3N4 : SiO2 selectivity was achieved at low HF concentrations; at higher HF concentrations, the selectivity decreased rapidly below 1. Water additions to the system produced similar results. Particulate contamination levels were also significantly reduced when a deionized water rinse was used.
Home
Learn about HERO
Using HERO
Search HERO
Projects in HERO
Risk Assessment
Transparency & Integrity