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4570892 
Journal Article 
Electrically Bistable Memory Cells from Poly (3-hexylthiophene)/Poly (ethylene oxide) Doped with Ethyl Viologen Bilayer System 
Li, Yueqin; Wang, Zhuye; Song, Y; Zhang, Xiyu; Jiang, Lei; Wu, XX; Hua, Q 
2015 
Yes 
Gaofenzi Xuebao
ISSN: 1000-3304 
12 
1464-1470 
WOS:000370510500013 
This study has focused on preparing an OFET-structured memory device based on poly (3hexylthiophene)/poly (ethylene oxide) doped with ethyl viologen diperchlorate (P3HT/(PEO + EV)) bilayer solid membranes and investigating the electrical response of this system. The obtained data revealed that the conductivity of the system can be reversibly switched between high and low conductance states with write and erase bias at + 3 and 3 V, respectively, and readout bias at 0. 5 V. The system showed good resistive bistable memory characteristics with the ON/OFF current ratio up to 10(5). Although the ON current decayed with the retention time, the write/erase action remained robust after 2800 s readout operation, indicating the reliability of the switching characteristics. To better understand the memory mechanism, confocal laser scanning microscopy (CLSM) was used to monitor the fluorescence fluctuations during the write and erase pulses. The obtained results showed that fluorescence from P3 HT layer quenched gradually when the switching-ON pulse was applied, indicating polarons formed at the source electrode and then propagated from the source to the drain electrode with a rate of around 120 mu/s. However, fluorescence recovered immediately when the switching-OFF pulse was applied, demonstrating P3 HT polarons were reduced to neutral state. 
Poly (3-hexylthiophene); Ethyl viologen diperchlorate; Polyelectrolyte; Electrical memory; Confocal laser scanning microscopy