US EPA

4574484 

Journal Article 

Two-Dimensionally Layered p-Black Phosphorus/n-MoS2/p-Black Phosphorus Heterojunctions 

Lee, G; Pearton, SJ; Ren, F; Kim, J 

2018 

1 

ACS Applied Materials & Interfaces
ISSN: 1944-8244
EISSN: 1944-8252 

10 

12 

10347-10352 

English 

29485269 

10.1021/acsami.7b19334 

WOS:000428972700053 

Layered heterojunctions are widely applied as fundamental building blocks for semiconductor devices. For the construction of nanoelectronic and nanophotonic devices, the implementation of two-dimensional materials (2DMs) is essential. However, studies of junction devices composed of 2DMs are still largely focused on single p-n junction devices. In this study, we demonstrate a novel pnp double heterojunction fabricated by the vertical stacking of 2DMs (black phosphorus (BP) and MoS2) using dry-transfer techniques and the formation of high-quality p-n heterojunctions between the BP and MoS2 in the vertically stacked BP/MoS2/BP structure. The pnp double heterojunctions allowed us to modulate the output currents by controlling the input current. These results can be applied for the fabrication of advanced heterojunction devices composed of 2DMs for nano(opto)electronics.