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4593104 
Journal Article 
Reliability of polycrystalline silicon thin film resistors 
Nakabayashi, M; Ohyama, H; Simoen, E; Ikegami, M; Claeys, C; Kobayashi, K; Yoneoka, M; Miyahara, K 
2001 
1 
Microelectronics Reliability
ISSN: 0026-2714 
41 
9-10 
1341-1346 
WOS:000171384900013 
This paper reports on the long-term stability of the resistance of Poly-Si thin film resistors, implanted with boron (B) or phosphorous (P) atoms, subjected to a thermal and electrical stress. The observed degradation in resistance after thermal and electrical stress pointed out that the resistance of Poly-Si films implanted with boron atoms increases for tensile stress, while no changes were observed for Poly-Si films implanted with phosphorus. (C) 2001 Elsevier Science Ltd. All rights reserved.