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4608878 
Journal Article 
Field-Induced n-Doping of Black Phosphorus for CMOS Compatible 2D Logic Electronics with High Electron Mobility 
Xu, Y; Yuan, J; Zhang, Kai; Hou, Y; Sun, Qiu; Yao, Y; Li, S; Bao, Q; Zhang, Han; Zhang, Y 
2017 
Yes 
Advanced Functional Materials
ISSN: 1616-301X
EISSN: 1616-3028 
WILEY-V C H VERLAG GMBH 
WEINHEIM 
27 
38 
1702211 
English 
WOS:000412675600003 
Black phosphorus (BP) has been considered as a promising two-dimensional (2D) semiconductor beyond graphene owning to its tunable direct bandgap and high carrier mobility. However, the hole-transport-dominated characteristic limits the application of BP in versatile electronics. Here, we report a stable and complementary metal oxide semiconductor (COMS) compatible electron doping method for BP, which is realized with the strong field-induced effect from the K+ center of the silicon nitride (SixNy). An obvious change from pristine p-type BP to n type is observed after the deposit of the SixNy on the BP surface. This electron doping can be kept stable for over 1 month and capable of improving the electron mobility of BP towards as high as similar to 176 cm(2) V-1 s(-1). Moreover, high-performance in-plane BP p-n diode and further logic inverter were realized by utilizing the n-doping approach. The BP p-n diode exhibits a high rectifying ratio of similar to 10(4). And, a successful transfer of the output voltage from "High" to "Low" with very few voltage loss at various working frequencies were also demonstrated with the constructed BP inverter. Our findings paves the way for the success of COMS compatible technique for BP-based nanoelectronics. 
black phosphorus; field-induced n-doping; logic inverters; p-n junctions