US EPA

4834726 

Journal Article 

High-performance multilayer WSe2 field-effect transistors with carrier type control 

Pudasaini, PRaj; Oyedele, A; Zhang, C; Stanford, MG; Cross, N; Wong, AT; Hoffman, AN; Xiao, Kai; Duscher, G; Mandrus, DG; Ward, TZ; Rack, PD 

2018 

1 

Nano Research
ISSN: 1998-0124 

11 

2 

722-730 

10.1007/s12274-017-1681-5 

WOS:000419959500012 

In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses < 3, similar to 4, and > 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications. 

transition metal dichalcogenide; field-effect transistors; carrier control; plasma treatment; carrier mobility