Jump to main content
US EPA
United States Environmental Protection Agency
Search
Search
Main menu
Environmental Topics
Laws & Regulations
About EPA
Health & Environmental Research Online (HERO)
Contact Us
Print
Feedback
Export to File
Search:
This record has one attached file:
Add More Files
Attach File(s):
Display Name for File*:
Save
Citation
Tags
HERO ID
4836103
Reference Type
Journal Article
Title
Structural, optical, and surface properties of WO3 thin films for solar cells
Author(s)
Simchi, H; Mccandless, BE; Meng, T; Shafarman, WN
Year
2014
Is Peer Reviewed?
Yes
Journal
Journal of Alloys and Compounds
ISSN:
0925-8388
Volume
617
Page Numbers
609-615
DOI
10.1016/j.jallcom.2014.08.047
Web of Science Id
WOS:000344135800098
Abstract
Transparent back contacts can be used in thin film solar cells facilitating their potential application in tandem cells, bifacial devices and solar windows. In this study, tungsten oxide (WO3) thin films were deposited by Radio Frequency (RF) reactive sputtering in Ar + 02 ambient. The effects of post deposition anneals in air on the structural, optical, and surface properties of the deposited films were investigated using X-ray diffraction, UV/Vis/NIR spectrophotometry, and X-ray photoelectron spectroscopy, respectively. As-deposited films exhibited amorphous structures with no change after annealing at 300 degrees C. Samples annealed at 400 and 500 degrees C were crystallized and identified as pure monoclinic WO3 phase with (200) and (002) preferred orientation, respectively, determined by XRD fiber texture analysis. Scherrer analysis of excess broadening indicated a coherency length of 50 and 65 nm for the 400 and 500 degrees C annealed films, respectively. High resolution XPS studies showed the presence of W6+ (WO3) oxidation states at the surface of the as-deposited and the 300 degrees C annealed films. Annealing at 400-500 degrees C led to an oxygen deficient surface with a sub-stoichiometric WO3-x phase. UV/Vis/NIR spectrophotometry revealed that post processing decreased the optical bandgap from 3.30 eV for the as-deposited films to 3.17 eV for the 500 degrees C annealed films. Results are compared with MoO3 films deposited by a similar technique. (C) 2014 Elsevier B.V. All rights reserved.
Keywords
Oxide materials; Semiconductors; Thin films; Energy storage materials; Optical properties
Tags
IRIS
•
Molybdenum
Litsearch 2018
WOS
Home
Learn about HERO
Using HERO
Search HERO
Projects in HERO
Risk Assessment
Transparency & Integrity