US EPA

4839750 

Journal Article 

CVD Growth of MoS2-based Two-dimensional Materials 

Liu, HF; Wong, SL; Chi, DZ 

2015 

Yes 

Chemical Vapor Deposition
ISSN: 0948-1907 

21 

10-12 

241-259 

10.1002/cvde.201500060 

WOS:000369140400003 

The 'self-limiting' character of graphene growth on the surface of metals such as Ni and Cu makes CVD the natural choice for growing large-area and continuous graphene films. Beyond graphene, absence of the self-limiting property results in a challenge to achieving large-area, high-quality two-dimensional (2D) crystals by CVD. Recent studies of structural, optical, and electrical properties of MoS2-based atomic layers grown by CVD are reviewed, concluding that thermal vapor deposition will outperform thermal vapor sulfurization in producing the required materials. Whether gaseous sources will replace the now dominant solid sources in direct deposition methods is an open issue. The latest progression in various CVD techniques used in MoS2 growth and their resultant products are discussed and compared. 

MoS2 atomic layers; Thermal vapor depositions; Thermal vapor sulfurization; Two-dimensional materials