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4847496 
Journal Article 
Temperature Dependence of Resistivity of MoSi2-Si Composite Thin Films 
Kanai, Ryo; Hikita, S; Sato, Y; Yoshikado, S 
2014 
1 
Key Engineering Materials
ISSN: 1013-9826
EISSN: 1662-9795 
Key Engineering Materials 
582 
161-164 
WOS:000336235300038 
The temperature dependence of resistivity for thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with molar ratio of Si to Mo of 1:X (2.02 <= X <= 2.55) was analyzed. The temperature dependence could be explained by the multiplicative model consisting of a conduction model similar to the Gruneisen-Bloch model, a modified Anderson localization model for 2.02 <= X <= 2.21 and the modified Anderson localization model for 2.39 <= X <= 2.55 over a wide temperature range. 
resistance material; MoSi2-Si composite; thin film; temperature coefficient of resistivity; conduction mechanism; Gruneisen-Bloch model; Anderson localization 
IRIS
• Molybdenum
     Litsearch 2018
          WOS