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5033325 
Technical Report 
Characterization of the Two-Photon Absorption Carrier Generation Region in Bulk Silicon Diodes 
Hooten, NC 
2011 
GRA and I 
e 0 
The pulsed laser has been a popular experimental method for interrogating single event effects (SEEs) in microelectronic devices and circuits for many years. While particle accelerator testing is still considered to be the standard test method, the expense and availability of particle accelerator facilities suitable for SEE testing can often be limiting factors in thoroughly characterizing devices and circuits. Particle accelerator testing can also be destructive since devices can be exposed to a very high fluence of radiation, potentially resulting in device degradation. In addition to being more readily available and cost effective, laser testing offers deep insight into the spatial and temporal characteristics of SEEs that can be difficult or impossible to determine with broadbeam particle accelerator based test methods. Also, assuming the laser pulse energy is not excessively high, device degradation can be completely avoided. Because of these factors, SEE laser testing is an important resource for the the radiation effects community.