High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy (Retracted article. See vol. 503, pg. 65, 2018) | Health & Environmental Research Online (HERO)

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Citation
Tags

HERO ID

5062041

Reference Type

Journal Article

Title

High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy (Retracted article. See vol. 503, pg. 65, 2018)

Author(s)

Zhang, Y; Dong, Xin; Li, G; Li, W; Zhang, B; Du, G

Year

2013

Is Peer Reviewed?

Yes

Journal

Journal of Crystal Growth
ISSN: 0022-0248

Volume

366

Page Numbers

35-38

DOI

10.1016/j.jcrysgro.2012.12.030

Web of Science Id

WOS:000314824800007

Relationship(s)

has retraction 5062034 High quality N-polar GaN two-dimensional growth on c-plane sapphire by metalorganic vapor phase epitaxy (Retraction of Vol 366, Pg 35, 2013)

Keywords

Morphology; X-ray diffraction; Metalorganic vapor phase epitaxy; Semiconducting gallium nitride