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619194 
Journal Article 
CMOS switched resonator frequency divider tuned by the switch gate bias 
Sheng-Lyang, J; Lin-yen, T; Chien-Feng, L 
2008 
50 
1 
222-225 
A switched resonator injection-locked frequency divider (ILFD) designed and fabricated using a standard 0.18-μm CMOS process is presented. The designed ILFD consists of double cross-coupled MOS switching pairs that use the current reuse technique to save power dissipation, and a switched LC resonator. The latter is composed of an inductor, a capacitor, and an inductor–MOS–inductor composite in parallel. The gate bias of MOSFET in the switched resonator is used to tune the free running ILFD frequency and extend the locking range of the ILFD. Measurement results show that at the supply voltage of 1.8 V, the divider free-running frequency is from 3.8 to 4.5 GHz, and at the incident power of 0 dBm the locking range is from the incident frequency of 7.6 to 9.26 GHz. © 2007 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 222–225, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23045 [ABSTRACT FROM AUTHOR] Copyright of Microwave & Optical Technology Letters is the property of Wiley Periodicals, Inc. 2004 and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts) 
RESONATORS; METAL oxide semiconductors, Complementary; ELECTRIC inductors; CAPACITORS; METAL oxide semiconductor field-effect transistors; RADIO frequency; CMOS; injection-locked frequency divider; locking range; switched resonator