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6587747 
Journal Article 
Selective SiO2/Al2O3 etching in CF4 and SF6 high-density plasma 
Hsiao, R; Miller, D; Santini, H; Robertson, N; , 
1996 
ELECTROCHEMICAL SOCIETY INC 
PENNINGTON 
ELECTROCHEMICAL SOCIETY SERIES 
96 
12 
480-491 
WOS:A1996BJ91Z00048 
Selective etching of SiO2 over Al2O3 in SF6 and CF4 high- density plasmas was studied. A design-of-experiment approach was used to investigate the effect of inductive power, bias power, and process pressure. The dependence of etch rate and etch rate ratio on those parameters in SF6 plasma was found to be drastically different from that in CF4 plasma. The results were rationalized using the existing knowledge of the high-density-plasma characteristics and the nature of SF6 and CF4 plasma. The SiO2/Al-2/O-3 etch rate ratio in SF6 plasma was found to be much higher than that in CF4 plasma. The results also provided a practical guideline on how to achieve highly selective SiO2/Al2O3 etching. 
Mathad, GS; Meyyappan, M; 
1-56677-164-1 
11th Symposium on Plasma Processing, at the 189th Meeting of the Electrochemical-Society 
LOS ANGELES, CA 
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