US EPA

6587861 

Journal Article 

Enhanced data retention characteristic on SOHOS-type nonvolatile flash memory with CF4-plasma-induced deep electron trap level 

Hsieh, C; Chen, YYu; Lin, W; Lin, G; Lou, J; , 

2011 

Yes 

E C S Transactions
ISSN: 1938-5862 

ELECTROCHEMICAL SOC INC 

PENNINGTON 

ECS Transactions 

35 

2 

257-263 

10.1149/1.3568868 

WOS:000301040100027 

The improved data retention characteristics of Polysilicon-oxide-hafnium oxide-oxide-silicon (SOHOS) type nonvolatile memory were obtained by post-HfO2 trapping layer deposition tetrafluoromethane (CF4) plasma treatment. The memory characteristics such as program/erase speed, retention and endurance were studied comprehensively. That fluorine atoms incorporated into Hf-based high-k material eliminate shallow trap defect level effectively and remain deeper trap level. Although the shallow traps of the HfOF trapping layer SOHOS memory have passivated, it doesn't deteriorate the program/erase speed obviously and retention characteristic was then improved because of deeper electron storage level. The results clearly indicate CF4 plasma treatment-induced deep electron storage level is a feasible technology for future SOHOS-type nonvolatile flash memory application. 

Iwai, H; Ozturk, MC; Narayanan, V; Roozeboom, F; Kwong, DL; Timans, PJ; Gusev, EP; 

978-1-60768-213-4 

International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications/219th Meeting of the Electrochemical-Society (ECS) 

Montreal, CANADA