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6589418 
Journal Article 
The role of oxygen additions in the plasma etching of silicon in tetrafluoromethane and elegas (SF6) 
Goncharenko, AA; Slovetskii, DI; Shelykhmanov, EF 
1983 
Yes 
Journal of Applied Spectroscopy
ISSN: 0021-9037
EISSN: 1573-8647 
38 
4 
387-393 
INSPEC:2222995 
The nonequilibrium plasma of low-pressure electrical discharges (Ples600 Pa) in tetrafluoromethane, elegas (SF6), and their mixtures with oxygen is widely used to fabricate semiconductor instruments and integrated circuits, to create `dry' methods of materials processing in order to clean the surfaces of specimens, and to etch various materials, protective and masking layers. The directed development of plasma chemical technological processes and their optimization and the design of plasma chemical equipment requires a study to be made of the interaction mechanisms between plasma and a surface. The purpose of investigation is to study the mechanism of the action of oxygen additions on the plasma chemical etching of materials in a fluorocarbon plasma. To solve the problem posed, experimental equipment was developed which enabled the mechanism of reactions in the plasma of a HF discharge and a DC glow discharge to be studied.