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6590199 
Journal Article 
Plasma etching of silicon and its compounds in the Freon plasma 
Jankuj, J 
1979 
Yes 
Acta Physica Slovaca
ISSN: 0323-0465 
29 
2 
155-159 
INSPEC:1436613 
Results applicable to microelectronics technology are presented showing the behaviour of CF4+Ar and CHF3+O2 mixtures in plasma etching of Si and its compounds in an inductively coupled RF generator in a cylindrical quartz chamber in CF4, CCl2F2, CHF3 gases and some of their mixtures with O2, N2, He, Ar.