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6590510 
Journal Article 
A novel vacuum lithography with SiNx resist by focused ion beam exposure and dry etching development 
Takahashi, S; Ohashi, M; Fukatsu, S; Shiraki, Y; Ito, R 
1991 
Yes 
AIP Conference Proceedings
ISSN: 0094-243X
EISSN: 1551-7616 
227 
96-99 
INSPEC:4014229 
Proposes a novel lithography technique applicable to in-situ processing, where plasma-CVD (P-CVD) deposited SiNx is used as a resist, Ga-FIB implantation as exposure, and CF4 dry etching as development. The authors describe its lithographic properties and demonstrate deep anisotropic pattern etching of a GaAs substrate. In addition, they show that the SiNx resist makes ion-induced substrate damage minimal.