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6610083 
Journal Article 
Low-voltage Pentacene Field-Effect Transistors Based on P(S-r-BCB-r-MMA) Gate Dielectrics 
Russell, TP; Hawker, CJ; 구송희; 이화성; 조정호; 류두열 
2011 
22 
5 
551-554 
KJD:ART001595741 
One of the key issues in the research of organic field‐effect transistors (OFETs) is the low‐voltage operation. To address this issue, we synthesized poly(styrene-r-benzocyclobutene-r-methyl methacrylate) (P(S-r-BCB-r-MMA)) as a thermally cross-linkable gate dielectrics. The P(S-r-BCB-r-MMA) showed high quality dielectric properties due to the negligible volume change during the cross‐linking. The pentacene FETs based on the 34 nm‐thick P(S-r-BCB-r-MMA) gate dielectrics operate below 5 V. The P(S-r-BCB-r-MMA) gate dielectrics yielded high device performance, i.e. a field-effect mobility of 0.25 ㎠/Vs, a threshold voltage of -2 V, an sub‐threshold slope of 400 mV/decade, and an on/off current ratio of ∼10^5. The thermally cross-linkable P(S-r-BCB-r-MMA) will provide an attractive candidate for solution-processable gate dielectrics for low-voltage OFETs.