Room temperature defect etching of III-V compounds and alloys grown on Si substrate using hydrogen fluoride and nitric acid | Health & Environmental Research Online (HERO)

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Citation
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HERO ID

6650635

Reference Type

Journal Article

Title

Room temperature defect etching of III-V compounds and alloys grown on Si substrate using hydrogen fluoride and nitric acid

Author(s)

Nishikawa, H; Soga, T; Jimbo, T; Umeno, M; ,

Year

1995

Publisher

TRANSTEC PUBLICATIONS LTD

Location

ZURICH-UETIKON

Page Numbers

1923-1926

Web of Science Id

WOS:A1995BE88Y00323

Abstract

The etch pits of GaAsP grown on Si substrate and the etch hillock of AlGaAs grown on Si have been revealed with the solution of hydrogen fluoride and nitric acid. It is shown that these etch pits and hillocks correspond to dislocations by a series of etch pit observation.

Editor(s)

Suezawa, M; KatayamaYoshida, H;

ISBN

0-87849-716-1

Conference Name

18th International Conference on Defects in Semiconductors (ICDS-18)

Conference Location

SENDAI, JAPAN