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6672857 
Journal Article 
Removing postash polymer residue from BEOL structures using inorganic chemicals 
Archer, L; Henry, SA; Nachreiner, D 
2001 
0 
Micro
ISSN: 1081-0595 
19 
6 
95-7, 100, 102-3 
INSPEC:7007617 
Among the many challenges facing the semiconductor industry are those associated with postash polymer residue removal in both front-end-of-line (FEOL) and back-end-of-line (BEOL) processing. In BEOL processing, the removal of residue from both metal lines and contact/via structures is critical. This article discusses research conducted by SEZ on the development of a novel inorganic chemistry using a sulfuric acid/peroxide/hydrogen fluoride mixture for removing postash polymer from BEOL structures.