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6673354 
Journal Article 
Electrical properties of platinum in silicon 
Conti, M; Panchieri, A 
1971 
40 
6 
544-546 
INSPEC:295157 
The actual nature and position of Platinum centers were investigated through resistivity measurement on Platinum doped N and P crystals and through photocurrent in junction diodes. Float zone wafers with (III) orientation were lapped and polished down to 200-250 microns, covered with a 4000 Aring Platinum layer of better than 4 nine purity and then diffused for 24 hours in a nitrogen atmosphere at the required temperature. Czochralski crystals have only been used in low resistivity samples (less than 0.4 Omegacm). The surfaces were then lapped and etched in nitric and hydrofluoric acid removing 30 mum. Sample resistivity was measured by the four-point method.