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6679877 
Book/Book Chapter 
HF-H2O2-H2O-Mixtures for Cleaning Solar Grade-Silicon: Removal of Metal Contaminations With HNO3-Free Etching Solutions 
Gondek, C; Lippold, M; Rover, I; Kroke, E 
2011 
Proceedings of the 26th European International Conference on Photovoltaic Solar Energy 
3818-3821 
INSPEC:12822443 
In the present study, the nitric acid-free etching system HF-H2O2-H2O is investigated. The reactivity towards multicrystalline silicon is discussed over a wide concentration range, especially for high concentrations of hydrogen peroxide and hydrofluoric acid, and with respect to the rate-determining step in silicon dissolution kinetics. The resulting silicon surface is characterized by SEM measurement and IR spectroscopy. For low contaminated silicon material, HF-H2O2-H2O-mixtures effectively remove metal impurities. The decomposition of hydrogen peroxide is studied to gain information on the chemical stability of hydrogen peroxide in the etching mixture and towards silicon surfaces. Possible applications for the more environmental-friendly etching-system are given. 
Helm, P.