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6683569 
Journal Article 
Anisotropy of etching rate for quartz in ammonium bifluoride 
Suda, P; Zumsteg, AE; Zingg, W 
1979 
359-363 
INSPEC:1639178 
The temperature dependence for the etching rates of synthetic quartz in +X, -X, Y and Z crystallographic directions together with AT-cut in a saturated solution of ammonium bifluoride (NH4FHF) is reported between 40 and 80degC. For comparison the etching rates in hydrofluoric acid have been measured. In both etchants anisotropy is very large (up to a factor of 1000) and the relation between etching rates are R(Z)>(R(AT)GtR(+X)>R(-X)>R(Y). The increase of etching rate with temperature is less in HF than in NH4FHF. A `polishing' effect was observed on +X-faces in NH4FHF whilst the pyramidal structure on Z-faces is emphasized by the etch process.