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6697514 
Journal Article 
Wet cleaning of trenches and vias after oxide/nitride dry etch with Cu exposed 
Verhaverbeke, S; Shao, JCH; Liu, L; , 
2001 
SCITEC PUBLICATIONS LTD 
UETIKON-ZUERICH 
311-314 
WOS:000168449500075 
A novel copper cleaning process has been developed. The process consists of two steps, the first step is a surface oxidation with a solution based on H2O2 with a surfactant and the second step is a surface cleaning/etching step based on hydrofluoric acid and HCl, then followed by an IPA dry. This process exhibits low copper etch rate pared with excellent removal efficiency of post-dry etch and ash residues and particles without haze addition. 
Heyns, M; Mertens, P; Meuris, M; 
3-908450-57-8 
5th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000) 
OOSTENDE, BELGIUM