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7096889 
Journal Article 
Lead-Free Dual-Phase Halide Perovskites for Preconditioned Conducting-Bridge Memory 
Han, JiSu; Kwak, KJu; Choi, MinJu; Lee, SolA; Hong, K; Kim, SooY; Jang, HoWon; Le, QVan; Kim, H; Lee, YJ; Lee, DaEun; Im, InH; Lee, MinK; Kim, SJu; Kim, J; , 
2020 
1 
Small
ISSN: 1613-6810
EISSN: 1613-6829 
WILEY-V C H VERLAG GMBH 
WEINHEIM 
32945139 
WOS:000570212000001 
Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2I7-Cs3Bi2I9) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages (<0.15 V), high on/off ratio (>10(7)), multilevel data storage, and long retention times (>5 x 10(4)s). The use of a closed-loop pulse switching method improves reversible RS properties up to 10(3)cycles with high on/off ratio above 10(6). With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications.