A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O-3 and ZrTiO4 Buffer for Long Retention and Good Fatigue | Health & Environmental Research Online (HERO)

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Citation
Tags

HERO ID

7111164

Reference Type

Journal Article

Title

A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O-3 and ZrTiO4 Buffer for Long Retention and Good Fatigue

Author(s)

Park, JaeHyo; Joo, SKi; ,

Year

2015

Is Peer Reviewed?

Yes

Journal

I E E E Electron Device Letters
ISSN: 0741-3106

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

Location

PISCATAWAY

Page Numbers

1033-1036

DOI

10.1109/LED.2015.2472987

Web of Science Id

WOS:000362288700014

Relationship(s)

has retraction 11942260 A Novel Metal-Ferroelectric-Insulator-Silicon FET With Selectively Nucleated Lateral Crystallized Pb(Zr,Ti)O₃ and ZrTiO₄ Buffer for Long Retention and Good Fatigue (vol 36, pg 1033, 2015)

Abstract

A novel metal-ferroelectric-insulator-silicon (MFIS) field-effect transistor (FET) with a Pt/Pb(Zr,Ti)O-3 (PZT)/ZrTiO4 (ZTO)/p-Si structure was fabricated and investigated for the first time. The PZT was formed by selectively nucleated lateral crystallization (SNLC), showing large rectangularlike grains (similar to 40 mu m) and smooth interface properties. An ultrathin ZTO layer showed a high dielectric constant (50), smooth interfaces in a ZTO/p-Si and PZT/ZTO layer, and an excellent interdiffusion barrier. From these material properties, the MFIS FET showed an excellent fatigue characteristic, which did not show any degradation in memory window (2.1 V), gate current density (10(-8) A/mu m), and fast P/E switching speed (500 ns) even after 1011 fatigue cycles. Furthermore, a long retention time, which only decreased 12.55% after 1 month and 26.97% after 10 years, was exhibited.