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7133914 
Journal Article 
Thermoelectric properties of Pb-doped bismuth telluride thin films deposited by magnetron sputtering 
Zhou, Y; Li, L; Tan, Q; Li, JF; , 
2014 
Yes 
Journal of Alloys and Compounds
ISSN: 0925-8388 
ELSEVIER SCIENCE SA 
LAUSANNE 
362-367 
WOS:000330579600057 
Nanocrystalline n-type bismuth telluride (Bi2Te3) thin films doped with lead (Pb) were deposited by radiofrequency magnetron sputtering. The effects of Pb doping on the carrier concentration and the thermoelectric properties of the Bi2Te3 thin film were investigated. Optimization of the carrier concentration significantly increased the Seebeck coefficient of the Bi2Te3 film and reduced the carrier thermal conductivity. These phenomena contributed to the enhancement of the thermoelectric properties of the Bi2Te3 film. Power factors of 2.50 and 2.15mWK(-2) m(-1) were achieved at 473 K for the as-deposited and annealed Bi2Te3 films with Pb doping concentration of 0.38 at.%, respectively. The experimental data demonstrate that Pb doping can effectively control the carrier concentration of the n-type Bi2Te3 film. The Pb-doped Bi2Te3 film is a promising material for thermoelectric microdevices. (C) 2013 Elsevier B.V. All rights reserved.